A novel hetero-material gate (HMG) MOSFET for deep-submicron ULSI technology
- Xing Zhou; Wei Long
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
This Paper Appears in :
Electron Devices, IEEE Transactions on
on Pages: 2546
- 2548
| Dec. 1998 |
Vol. 45 |
Issue: 12 |
ISSN: 0018-9383 |
References Cited: 7
CODEN: IETDAI
Accession Number: 6107622
Abstract:A novel hetero-material gate MOSFET intended for integration into the existing deep-submicron silicon technology is proposed and simulated. It is shown that by adding a layer of material with a larger workfunction to the source side of the gate, short-channel effects can be greatly suppressed without degrading the driving ability. The threshold voltage roll-off can be compensated and tuned by controlling the length of this second gate. The new structure has great potential in breaking the barrier of deep-suhmicron MOSFET's scaling beyond 0.1 /spl mu/m technologies.
Subject Terms:MOSFET; hetero-material gate MOSFET; deep-submicron ULSI technology; Si technology; work function; short-channel effects suppression; threshold voltage roll-off compensation; MOSFET scaling; HMG-MOSFET; 0.1 micron; Si