A Unified Compact Model for
Emerging DG FinFETs and GAA Nanowire MOSFETs Including Long/Short-Channel
and Thin/Thick-Body Effects
(Invited Paper)
Xing Zhou*, Guojun Zhu, Machavolu K. Srikanth, Shihuan Lin, Zuhui Chen,
Junbin Zhang, and Chengqing Wei
School of Electrical & Electronic Engineering, Nanyang Technological
University, Singapore 639798
* Email: exzhou@ntu.edu.sg
Proc. of the 10th International Conference
on Solid-State and Integrated-Circuit Technology (ICSICT2010),
Shanghai, China, Nov. 2010, pp.
1725-1728.
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Abstract
This paper presents the characteristics of ideal double-gate/gate-all-around
(DG/GAA) MOSFETs, including the long/short-channel and thin/thick-body
effects. A unified compact model (Xsim) based on the unified regional
modeling (URM) approach for the generic DG/GAA MOSFET is used to demonstrate
the expected behaviors, which should be included in the core model describing
such emerging devices.
References
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[4] G. H. See, “Scalable Compact Modeling for Nanometer CMOS Technology,”
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