ISMA2000

Surface-Potential-Based Model of Reverse Short Channel Effect in Submicrometer MOSFETs with Nonuniform Lateral Channel Doping

W. Qian, X. Zhou, Y. Wang, and K. Y. Lim

School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798

Proc. of SPIE, Vol. 4228, Design, Modeling, and Simulation in Microelectronics, Bernard Courtois, Serge N. Demidenko, L. Y. Lau, Editors, pp. 243-248, 2000.

Oral presentation at the 2nd International Symposium on Microelectronics and Assembly (ISMA2000)

Singapore, Nov. 27 - Dec. 1, 2000.

Copyright Notice

© 2000 SPIE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the SPIE.

Abstract

In this paper, a consine-like function instead of a box or a Gaussion-like function is constructed as the pile-up doping in device channel near LDD. The surface potential distribution of nonuniform doping channel is obtained by using Gauss' Law. Threshold voltage roll-up is observed, which is due to the pile-up doping. The simulation results are verified by MEDICI numerical data..

References

[1] B. Szelag, F. Balestra, and Gerard Ghibaudo, Comprehensive Analysis of Reverse Short-Channel Effect in Si MOSFET’s from Low-Temperature Operation, IEEE Electron Device Letters, Vol. 19, No. 12, 1998, pp. 511-513.
[2] M. Oriowski, C. Mazure, and F. Lau, Submicron Short Channel Effects due to the gate reoxidation induced lateral interstitial diffusion, IEDM Tech. Dig., 1987, p. 632.
[3] H. Brut, A. Juge, and G. Ghibaudo, Physical Model of Threshold Voltage in Silicon MOS Transistors Including Reverse Short Channel Effect, Electronics Letters, Vol. 31, No. 5, 1995, pp. 411-412.
[4] Tatsuya Kunikiyo, Katsuyoshi Mitsui, Masato Fujinaga, Tetsuya Uchida, and Norihiko Kotani, Reverse Short-Channel Effect Due to Lateral Diffusion of Point-Defect Induced by Source/Drain Ion Implantation, IEEE Trans. On CAD of IC and Systems, Vol. 13, No. 4, 1994, pp. 507-514.
[5] Bin Yu, Clement H. J. Wann, Edward D. Nowak, Kenji Noda, and Chenming Hu, Short-Channel Effect Improved by Lateral Channel Engineering in Deep-Submicrinmeter MOSFET’s, IEEE Trans. on Electron Devices, Vol. 44, No. 4, 1997, pp. 627-624.
[6] S. Karmalkar and K. N. Bhat, Aprocess-Parameter-Based Circuit Simulation Model for Ion-Implanted MOSFET’s and MESFET’s, IEEE J. Solid-State Circuits, 24(1), 1989, pp. 139-145.
[7] J. Grna, and R. Janota, Appromimation of the Gaussion Implanted Profile by a Rectangular Profile, Solid-State Electronics, 35(12), 1992, pp. 1833-1835.