ISMA2000

Investigation of Reverse Short Channel Effect with Numerical and Compact Models

Y. Wang, K. Y. Lim, W. Qian, and X. Zhou

School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798

Proc. of SPIE, Vol. 4228, Design, Modeling, and Simulation in Microelectronics, Bernard Courtois, Serge N. Demidenko, L. Y. Lau, Editors, pp. 366-373, 2000.

Oral presentation at the 2nd International Symposium on Microelectronics and Assembly (ISMA2000)

Singapore, Nov. 27 - Dec. 1, 2000.

Copyright Notice

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Abstract

In this paper, a physically based reverse short channel effect (RSCE) threshold voltage (V_th) compact model is investigated and compared with numerical simulation. A new method to predict RSCE using the compact model is given, which is supported by the TCAD data. A wide range of V_th predictions of n-channel MOSFET’s with pile-up structures is conducted. Good prediction results are achieved between the RSCE compact model and TCAD data. The results further support the physics-based RSCE model, which is useful for both circuit simulation and technology development as well as device design.

References

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[6] K. Y. Lim, X. Zhou, and Y. Wang, “Physics-Based Threshold Voltage Modeling with Reverse Short Channel Effect,” submitted to Journal of Modeling and Simulation of Microsystems, 2000.