Japanese Journal of Applied Physics, Vol. 46, No. 4B, pp. 2067-2072, 2007.
(Manuscript received September 15, 2006; accepted November 21, 2006; published online April 24, 2007)

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In this paper, explicit surface potentials for undoped asymmetric double-gate (DG) MOSFETs suitable for compact model development are presented for the first time.  The model is physically derived from Poisson's equation in each region of operation and adopted in the unified regional approach.  The proposed model is physically scalable with oxide/channel thicknesses and has been verified with the generic implicit solutions for independent gate biases as well as for different gate/oxide materials.  The model is extendable to SOI and symmetric-DG MOSFETs.  Finally a continuous, explicit drain-current equation has been derived based on the developed explicit surface-potential solutions.

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