Modeling of Threshold Voltage with Reverse Short Channel Effect

K. Y. Lim, X. Zhou, and Y. Wang

School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798

Figures

Fig. 1 | Fig. 2 | Fig. 3 | Fig. 4 | Fig. 5

Fig-1

Fig. 1 MEDICI simulated doping profiles across MOSFET channel for Lg = 0.24, 0.34, 0.5 and 1 µm.

Fig-2a (a)

Fig-2b (b)

Fig. 2 Threshold voltage against channel length for (a) lb variation and (b) Npile variation.

Fig-3

Fig. 3 Effective channel doping against channel length for three different characteristic lengths. Solid lines: proposed RSCE model; Dashed lines: hyperbolic cosine model [7].

Fig-4a (a)
Fig-4b (b)

Fig. 4 Threshold voltage against channel length for three different characteristic lengths. (a) proposed RSCE model; (b) hyperbolic cosine model [7]. Symbols: MEDICI data, Lines: model data.

Fig-5

Fig. 5 Threshold voltage for various substrate biases. Symbols: experimental data, Lines: model data.