MSM2001-abstract1

Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET's

S. B. Chiah*, X. Zhou*, K. Y. Lim†, Y. Wang*, A. See†, and L. Chan†
*School of Electrical & Electronic Engineering, Nanyang Technological University,
Nanyang Avenue, Singapore 639798. (Phone: 65-7904532, Fax: 65-7912687, Email: exzhou@ntu.edu.sg)
†Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial Park D, Street 2, Singapore 738406

Proc. of the 4th International Conference on Modeling and Simulation of Microsystems (MSM2001).

Hilton Head Island, SC, March 19-21, 2001, pp. 486-489.

Copyright Notice

© 2001 Computational Publications. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from Computational Publications.

Abstract

A model for effective channel doping in submicron LDD nMOSFET's is presented by adding the effect of the lateral nonuniform pile-up charge centroid to the Gaussian profile with peak doping near the edge of the metallurgical channel. The effect of the pile-up centroid on the threshold voltage parameter extraction is elaborated, from which semi-empirical relationships on all fitting parameters are formulated. Threshold voltage versus gate length data from MEDICI-simulated devices with lateral Gaussian pile-up doping profiles are used for the verification of this model.

References

[1] M. Nishida and H. Onodera, “An Anomalous Increase of Threshold Voltages with Shortening the Channel Lengths for Deeply Boron-Implanted n-Channel MOSFET’s,” IEEE Tran. Electron Devices, vol. ED-28, pp. 1101–1103, 1981.
[2] C. Machala, R. Wise, D. Mercer, and A. Chatterjee, Proc. SISPAD’97, 1997, pp. 141–143.
[3] T. Hori, “0.1µm CMOS Technology with Tilt-Implanted Punchthrough Stopper (TIPS),” IEDM Tech. Dig., 1994, p. 75.
[4] K. Y. Lim, X. Zhou, and Y. Wang, “Modeling of Threshold Voltage with Reverse Short Channel Effect,” Proc. MSM2000, San Diego, CA, Mar. 2000, pp. 317–320.
[5] X. Zhou and K. Y. Lim, “Unified MOSFET Compact I-V Model Formulation Through Physics-Based Effective Transformation,” to appear in IEEE Trans. Electron Devices.
[6] Z.-H. Liu, C. Hu, J.-H. Huang, T.-Y. Chan, M.-C. Jeng, P. K. Ko, and Y. C. Cheng, “Threshold Voltage Model for Deep-Submicrometer MOSFET’s,” IEEE Trans. Electron Devices, vol. 40, pp. 86–94, Jan. 1993.

Citation

[6] X. Zhou, S. B. Chiah, K. Y. Lim, Y. Wang, X. Yu, S. Chwa, A. See, and L. Chan, "Technology-dependent modeling of deep-submicron MOSFET's and ULSI circuits," (Invited Paper), Proc. 6th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-2001), Shanghai, Oct. 2001, Vol. 2, pp. 855-860.
[2] S. B. Chiah, X. Zhou, K. Y. Lim, A. See, and L. Chan, "Physically-based approach to deep-submicron MOSFET compact model parameter extraction," to appear in Proc. 5th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2002), San Juan, Puerto Rico, Apr. 2002.
[4] S. B. Chiah, X. Zhou, and K. Y. Lim, "Unified Length-/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width Effects," Proc. of the 6th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2003), San Francisco, CA, Feb. 2003, vol. 2, pp. 338-341.