NOTE
ELECTRON TRANSPROT IN GRADED-BAND DEVICE: INTERPLAY
OF FIELD, COMPOSITION AND LENGTH DEPENDENCIES
Solid-State Electronics, Vol. 37,
No. 11, pp. 1888-1890, November 1994.
(Received 9 November 1993; in revised form 10 March 1994)
Copyright | References
| Citation | Figures
| Back
Copyright Notice
© 1994 Elsevier Science Ltd. Personal use of this material is
permitted. However, permission to reprint/republish this material
for advertising or promotional purposes or for creating new
collective works for resale or redistribution to servers or lists, or to
reuse any copyrighted component of this work in other works must be obtained
from Elsevier Science Ltd.
References
-
H. Kroemer, J. Vac. Sci. Technol. B1, 126 (1983).
-
C. M. Maziar, M. E. Klausmeier-Brown, S. Bandyopadhyay, M. S. Lundstrum
and S. Datta, IEEE Trans. Electron Devices ED-33, 881 (1986).
-
C. M. Maziar and M. S. Lundstrum, IEEE Electron Device Lett. EDL-8, 90
(1987).
-
R. Katoh and M. Kurata IEEE Trans. Electron Devices 36, 2122 (1989).
-
J. Hu, K. Tomizawa and D. Pavlidis, IEEE Trans. Electron Devices 36, 2138
(1989).
-
J. Hu, D. Pavlidis and K. Tomizawa, IEEE Trans. Electron Devices 39, 1273
(1992).
-
H.-F. Chau, J. Hu, D. Pavlidis and K. Tomizawa, IEEE Trans. Electron Devices
39, 2711 (1992).
-
A. Yoshii, M. Tomizawa and K. Yokoyama, Proc. NASECODE III, p. 68 (1983);
see also: Process and Device Modeling (Edited by W. L. Engl), Chap. 6.
North-Holland, Amsterdam.
-
M. A. Osman, J. appl. Phys. 71, 308 (1992).
-
X. Zhou, IEEE Tran. Electron Devices 41, 484 (1994).
-
X. Zhou, T. Y. Hsiang and R. J. D. Miller, J. appl. Phys. 66, 3066 (1989).
Citation
-
[14] X. Zhou, "Regional Monte Carlo
Modeling of Electron Transport and Transit-Time Estimation in Graded-Base
HBT's," IEEE Trans. Electron Devices, Vol. 41, No. 4, pp. 484-490, April
1994.