NOTE

MONTE CARLO FORMULATION OF FIELD-DEPENDENT MOBILITY FOR AlxGa1-xAs


Solid-State Electronics, Vol. 38, No. 6, pp. 1264-1266, June 1995.

(Received 14 September 1994)


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References

  1. X. Zhou, IEEE Trans. Electron Devices 41, 484 (1994).
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Citation

  1. [13] A. Belghachi and A. Helmaoui, "Analysis of photocurrent in the i-layer of GaAs-based n–i–p solar cell," Solar Energy Mat. & Solar Cells, vol. 90, no. 12, pp. 1721-1733, July 2006. 
  2. [] P. Gangwani, S. Pandey, S. haldar, M. Gupta, R. S. Gupta, "A compact C-V model for 120 nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications," Microelectron. J., Vol. 38, No. 8-9, pp. 848-854, Aug.-Sep. 2007.


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