MSc-ISM: Independent Study Module

2007

• Numerical Simulation of Multiple-Gate MOSFETs

This project involves numerical simulation of emerging double-gate (DG) MOSFETs such as FinFET.  Internal physical quantities such as potential/charge distributions as well as terminal DC/AC characteristics can be obtained from numerical simulations, through which the student will gain understanding of the device characteristics of these future-generation device building blocks.
Student: Gu Yu

• Iterative Surface Potential Solutions for Double-Gate MOSFETs

This project involves study of iterative surface-potential solutions for generic double-gate (DG) and ultra-thin body (UTB) MOSFETs.  Based on the implicit voltage equation of a generic DG MOSFET, surface potentials can be solved through numerical iteration, which provides useful information for developing and validating analytical solutions.  Through the project, the student will gain understanding of the device physics of these future-generation device building blocks.
Student: Wong Gee Soon

• Review of Compact Models for Ultra-Thin Body (UTB) MOSFETs

This project involves a survey of existing analytical compact models for ultra-thin body (UTB) MOSFETs, which is becoming one of the candidates for next generation CMOS beyond bulk MOSFETs.  Comparison with various types of MOSFET structures can be made, through which the student will have a better understanding of the device characteristics and trade-offs.
Student: Ooi Eng Ping

• Survey of Future Generation Non-classical MOSFETs

This project involves a survey of future generation non-classical MOSFETs beyond bulk-CMOS, such as ultra-thin body (UTB) SOI and multiple-gate (double-gate/FinFET, tri-gate, pi-gate, omega-gate, gate-all-around) MOSFETs.  Comparison among various structures can be made, through which the student will gain knowledge on future device building blocks.
Student: Tom John