Solid-State Electronics, Vol. 45, No. 1, pp. 193-197, January 2001.
(Manuscript received November 25, 1999; revised August 3, 2000.)

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A physically-based effective mobility model is presented, which includes Coulombic, phonon, and surface roughness scattering mechanisms.  The model is semi-empirical and consists of three physics-based fitting parameters to be extracted with a single measurement of terminal current.  The developed model is shown to be more physical than the commonly-used empirical model, and the doping dependence can be modeled after parameter extraction.  The model has been verified with excellent prediction to the experimental data with broad bias and doping variations.

• [1] Lombardi C, Manzizni S, Saporito A, Vanzi M. IEEE Trans Comput Aid Des 1988;CAD-7:1164–71.
• [2] Sabnis AG, Clemens JT. IEDM Tech Dig 1979;18–21.
• [3] Mujtaba SA. PhD thesis, Stanford University, 1995.
• [4] Mujtaba SA, Pinto MR, Boulin DM, Rafferty CS, Dutton RW. Proc. SISDEP’95, Erlangen, Germany, 1995:424–7.
• [5] Villa S, Lacaita AL, Perron LM, Bez R. IEEE Trans Electron Dev 1998;45:110–5.
• [6] Tsividis YP. Operation and modeling of the MOS transistor. New York: McGraw-Hill; 1987.
• [7] Zhou X, Lim KY, Lim D. IEEE Trans Electron Dev 1999;46:807–9.
• [8] Zhou X, Lim KY, Lim D. IEEE Trans Electron Dev 2000;47:214–21.
• [9] Takagi S, Iwase M, Toriumi A. IEDM Tech Dig 1988:398–401.
• [10] Cheng Y, Chan M, Hui K, Jeng MC, Liu Z, Huang J, Chen K, Chen J, Tu R, Ko PK, Hu C. BSIM3v3 Manual, UC Berkeley, CA, 1996.
• [11] Lim KY, Zhou X, Lim D. Proc. MSM99, Puerto Rico, 1999:423–6.
• [12] Zhou X, Lim KY. revised and submitted to IEEE Trans Electron Dev.

• [8] X. Zhou and K. Y. Lim, "A compact MOSFET Ids model for channel-length modulation including velocity overshoot," Proc. 1999 International Semiconductor Device Research Symposium (ISDRS-99), Charlottesville, VA, Dec. 1999, pp. 423-426.
• [12] K. Y. Lim and X. Zhou, "A physically-based semi-empirical series resistance model for deep-submicron MOSFET I-V modeling," IEEE Trans. Electron Devices, Vol. 47, No. 6, pp. 1300-1302, June 2000.

1. [10] X. Zhou and K. Y. Lim, "Unified MOSFET compact I-V model formulation through physics-based effective transformation," IEEE Trans. Electron Devices, Vol. 48, No. 5, pp. 887-896, May 2001.
2. [9] X. Zhou, S. B. Chiah, K. Y. Lim, Y. Wang, X. Yu, S. Chwa, A. See, and L. Chan, "Technology-dependent modeling of deep-submicron MOSFET's and ULSI circuits," (Invited Paper), Proc. 6th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-2001), Shanghai, Oct. 2001, Vol. 2, pp. 855-860.
3. [14] K. Y. Lim and X. Zhou, "An analytical effective channel-length modulation model for velocity overshoot in submicron MOSFETs based on energy-balance formulation," Microelectronics Reliability, Vol. 42, No. 12, pp. 1857-1864, Dec. 2002.
4. [9] S. B. Chiah, X. Zhou, and K. Y. Lim, "Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs," Proc. of the 6th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2003), San Francisco, CA, Feb. 2003, vol. 2, pp. 342-345.
5. [13] S. B. Chiah, X. Zhou, K. Y. Lim, L. Chan, and S. Chu, "Source-Drain Symmetry in Unified Regional MOSFET Model," IEEE Electron Device Lett., Vol. 25, No. 5, pp. 311-313, May 2004.
6. [7] S. B. Chiah, X. Zhou, K. Chandrasekaran, K. Y. Lim, L. Chan, and S. Chu, "Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity," Proc. of the 7th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2004), Boston, MA, March 7-11, 2004, Vol. 2, pp. 175-178.
7. [13] B. Chiah, X. Zhou, K. Y. Lim, L. Chan, and S. Chu, "Source-Drain Symmetry in Unified Regional MOSFET Model," IEEE Electron Device Lett., Vol. 25, No. 5, pp. 311-313, May 2004.
8. [] H. Katto, "Extraction of series resistance using physical mobility and current models for MOSFETs," Solid-State Electron., Vol. 52, No. 2, pp. 190-195, Feb. 2008.

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