IEEE Transactions on Electron Devices, Vol. 46, No. 7, pp. 1492-1494, July 1999.

(Manuscript received January 7, 1999; revised March 24, 1999.)

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A novel method for direct extraction of deep-submicron MOSFET effective channel length is proposed, which requires only a single measurement of the “critical-current at linear-threshold” (“I_crit @ V_t0”) based on the maximum-g_m definition. With a simple calibration of the channel sheet resistance from the long-channel Icrit data, the effective channel length of any short-channel device on the same wafer can be determined with one measurement of I_crit @ V_t0 : Meanwhile, an averaged (modeled) effective channel length can be obtained from the same data set with a simple algorithm, which can be used for device/circuit modeling.

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1. [10] X. Zhou, K. Y. Lim, and D. Lim, "A general approach to compact threshold voltage formulation based on 2-D numerical simulation and experimental correlation for deep-submicron ULSI technology development," IEEE Trans. Electron Devices, Vol. 47, No. 1, pp. 214-221, Jan. 2000.
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6. [16] X. Zhou and K. Y. Lim, "De-embedding length-dependent edge-leakage current in shallow trench isolation submicron MOSFETs," to appear in Solid-State Electron., 2002.
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