IEEE Transactions on Electron Devices, Vol. 47, No. 1, pp. 214-221, January 2000.

(Manuscript received August 25, 1998; revised July 1, 1999.)

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A unified compact threshold voltage model is developed, which accounts for the normal and reverse short-channel effects with full range of body- and drain-bias conditions, and has been verified with experimental data down to 0.18 µm.  The model only has five process-dependent fitting parameters with a simple one-iteration extraction procedure, and can be correlated to process variables for aiding new deep-submicron technology development.  The approach to the model formulation is original and general, and can be extended to other key device performance parameters.

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ISI Citation